Laser Diode Specifications - Sony SLD1132VS

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635nm / 5mW / 5.6mm package

Absolute Maximum Ratings (Tc=25�C)

Characteristic Symbol Value Unit ld_mits.gif (1979 bytes)

SLD1132VS  5.6mm Package
Internal Circuit & Pin Connections
Optical output power Po 5 mW
Laser diode reverse voltage VR(LD) 2 V
Photodiode reverse voltage VR(PD) 15 V
Operating temperature Topr -10 to +40 �C
Storage temperature Tstg -40 to +85 �C

Optical and Electrical Characteristics (Tc=25�C)

Characteristic Symbol Min. Typ. Max. Unit Test Condition
Threshold current Ith - 50 70 mA -
Operating current Iop - 60 80 mA Po=3mW
Laser diode operating voltage Vop - 2.4 3.0 V Po=3mW
Lasing wavelength lp 625 635 645 nm Po=3mW
Beam divergence (FWHM) q // 5 7 12 deg Po=3mW
Beam divergence (FWHM) q ^ 24 32 40 deg Po=3mW
Differential efficiency h 0.15 0.35 0.8 mW/mA Po=3mW
Monitor current Im 0.05 0.10 0.30 mA Po=3mW, VR(PD)=5V
Astigmatism As - - 20 microns -

Disclaimer: The laser diode information summarized above is based on the respective diode manufacturer's commercial catalog and/or data sheet specifications. The data is presumed to be accurate; however, it is subject to change without notice. Optima makes no representation as to the accuracy of the information and does not assume any responsibility for errors or omissions contained herein.  The user must refer to the manufacturers specifications for details concerning the intended application and operation, diode limitations, and safety.

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Last modified: March 31, 2019